當(dāng)前位置:首頁 > 產(chǎn)品中心 > 二維材料 > 硒化物晶體 > InSe 硒化銦晶體 (Indium Selenide)
簡要描述:InSe (indium selenide) is the first commercially available InSe layered materials in the field.
相關(guān)文章
Related Articles詳細(xì)介紹
InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of InSe crystals by 2Dsemiconductors USA
產(chǎn)品咨詢
聯(lián)系我們
上海巨納科技有限公司 公司地址:上海市虹口區(qū)寶山路778號海倫國際大廈5樓 技術(shù)支持:化工儀器網(wǎng)掃一掃 更多精彩
微信二維碼
網(wǎng)站二維碼