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簡(jiǎn)要描述:二硒化鎢晶體 WSe2(Tungsten Diselenide)-P型晶體尺寸:~10毫米電學(xué)性能:半導(dǎo)體,P型晶體結(jié)構(gòu):六邊形晶胞參數(shù):a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°晶體類(lèi)型:合成晶體純度:>99.995%
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二硒化鎢晶體 WSe2(Tungsten Diselenide)-P型
晶體尺寸:~10毫米
電學(xué)性能:半導(dǎo)體,P型
晶體結(jié)構(gòu):六邊形
晶胞參數(shù):a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
晶體類(lèi)型:合成
晶體純度:>99.995%
X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.
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